RELIC - Real-time Electronics and Integrated Circuits

Publications

Articles in international journals

• J. Verbeeck, P. Leroux, M. Steyaert, ”Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance”, accepted for IOP Journal of Instrumentation, 2011.
• S. Put, E. Simoen, N. Collaert, A. De Keersgieter, C. Claeys, M. Van Uffelen, P. Leroux, ”Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs”, in IEEE Transactions on Nuclear Science, vol. 57, issue 4, pp. 1771-1776, August 2010.
• S. Put, E. Simoen, H. Mehta, M. Jurczak, M. Van Uffelen, P. Leroux, C. Claeys, ”Influence of Fin Width on the Total Dose Behavior of p-channel Bulk MuGFETs”, in IEEE Electron Device Letters, vol. 31 issue 3 pp. 243-245, March 2010.
• S. Put, H. Mehta, N. Collaert, M. Van Uffelen, P. Leroux, E. Simoen and C. Claeys, ”Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs”, in Special issue of the Elsevier Solid-State Electronics Journal, vol. 54, issue 2, pp. 178-184, February 2010.
• P. Leroux, W. De Cock, M. Van Uffelen, M. Steyaert, ”Design, Assessment and Modeling of an Integrated 0.4 um SiGe Bipolar VCSEL Driver under gamma-Radiation”, in IEEE Transactions on Nuclear Science,vol.56, issue 5, pp. 1920-1925, August 2009.
• S. Put, E. Simoen, S. Van Huylenbroeck, C. Claeys, M. Van Uffelen and P. Leroux, ”Effect of the presence of deep trench isolation on the gamma radiation behavior of a 0.13 um SiGe:C NPN HBT technology”, in IEEE Transactions on Nuclear Science, vol.56, issue 5, pp. 2198-2204, August 2009.
• S. Put, E. Simoen, N. Collaert, C. Claeys, M. Van Uffelen and P. Leroux, ”Geometry and strain dependence of the proton radiation behavior of MuGFET devices”, in IEEE Transactions on Nuclear Science, vol. 54, pp. 2227-2232, December 2007.
• P. Leroux, S. Lens, M. Van Uffelen, W. De Cock, M. Steyaert, F. Berghmans, ”Design and Assessment of a Circuit and Layout Level Radiation Hardened CMOS VCSEL Driver”, in IEEE Transactions on Nuclear Science , vol. 54, pp. 1055-1060, August 2007.
• M. Van Uffelen, S. Geboers, P. Leroux, F. Berghmans ”SPICE modelling of a discrete COTS SiGe HBT up to MGy dose levels”, in IEEE Transactions on Nuclear Science, vol. 53, pp. 1945-1949, August 2006.
• P. Leroux, M. Van Uffelen, F. Berghmans, A. Giraud, ”Design and Assessment of a High Gamma-Dose Tolerant VCSEL Driver with DiscreteSiGe HBT’s”, in IEEE Transactions on Nuclear Science, vol. 53, pp. 2033-2039, August 2006.
• V. Vassilev, S. Thijs, P. L. Segura, P. Wambacq, P. Leroux, G. Groeseneken, M. I. Natarajan, H. E. Maes, M. Steyaert, ”ESD-RF co-design methodology for the state of the art RF-CMOS blocks”, in Elsevier Microelectronics Reliability, vol. 45, pp. 255-268, February 2005.
• P. Leroux, V. Vassilev, M. Steyaert, H. Maes, ”High ESD Performance, Low Power CMOS LNA for GPS Applications”, in IEEE Journal of Electrostatics, vol. 59, pp. 179-192, October 2003.
• P. Leroux, J. Janssens, M. Steyaert, ”A 0.8dB NF ESD-protected 9mW CMOS LNA Operating at 1.23 GHz”, in IEEE Journal of Solid-State Circuits, vol. 37, pp. 760-765, June 2002.
• M. Steyaert, B. De Muer, P. Leroux, M. Borremans, K. Mertens, ”Low-Voltage, Low-Power CMOS-RF Transceiver Design”, in IEEE Transactions on Microwave Theory and Techniques, Vol. 50, pp. 281-287, January 2002.
• P. Leroux, M. Steyaert, ”A high performance 5.2GHz LNA with an on-chip inductor to provide ESD-protection”, in IEE electronics Letters, Vol. 37, pp. 467-469, March 2001.

Articles in international conference proceedings

• J. Verbeeck, P. Leroux, M. Steyaert, ”Radiation effects upon the mismatch of identically laid out transistor pairs”, accepted for the IEEE International Conference on Microelectronic Test Structures, The Netherlands, April, 2011.
• Y. Cao, P. Leroux, W. De Cock, M. Steyaert, ”A 1.7mW 11b 1-1-1 MASH Delta-Sigma Time-to-Digital Converter”, accepted for the IEEE International Solid-State Circuits Conference, San Francisco, US, February, 2011.
• M. Strackx, E. D'Agostino, G. Vandenbosch, P. Leroux, P. Reynaert, ”Measuring Material/Tissue Permittivity by UWB Time-domain Reflectometry Techniques”, in proceedings of the 3rd International Symposium on Applied Sciences in Biomedical and Communication Technologies, Rome, Italy, November, 2010.
• J. Verbeeck, P. Leroux, M. Steyaert, ”Design and Assessment of a Robust Voltage Amplifier with 2.5 GHz GBW and >100 kGy Total Dose Tolerance”, in proceedings of the Topical Workshop on Electronics for Particle Physics, Germany, September, 2010.
• E. Simoen, S. Put, P. Leroux, M. Van Uffelen, M. Jurczak, C. Claeys, ”Low-Frequency Noise Analysis of gamma-irradiated p-channel BulkMuGFETS” in proceedings of ULIS 2010 Ultimate Integration in Silicon , Glas- gow, Scotland, March 2010.
• W. De Cock, H. Versmissen, P. Leroux, M. Van Uffelen, M. Steyaert, ”Modelling of gamma-Radiation Effects in Bipolar Transistors with VHDL-AMS”, in proceedings of the Intl. Conference on Radiation and Its Effects on Components and Systems, Belgium, September, 2009.
• S. Put, E. Simoen, N. Collaert, C. Claeys, M. Van Uffelen and P. Leroux, ”Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs”, in proceedings of the Intl. Conference on Radiation and Its Effects on Components and Systems, Belgium, September, 2009.
• S. Put, E. Simoen, H. Mehta, M. Jurczak, M. Van Uffelen, P. Leroux and C. Claeys, ”Effect of variability in p-channel bulk MuGFETs on the gamma radiation behavior”, in proceedings of the IEEE Nuclear and Space Radiation Effects Conference, Canada, July, 2009.
• S. Put, H. Mehta, N. Collaert, M. Van Uffelen, P. Leroux, E. Simoen and C. Claeys, ”Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs”, in proceedings of EUROSOI, Sweden, January, 2009.
• E. Simoen, S. Put, M. Van Uffelen, P. Leroux, C. Claeys, H. Ohyama, R. Kulkarni, R. Schrimpf, K. Galloway, ”Radiation damage studies of strainengineered and high-mobility deep submicrometer MOSFETs”, in proceedings of The 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, Japan, December, 2008.
• D. De Jonghe, P. Leroux, M. Van Uffelen, W. De Cock, F. Tavernier and M. Steyaert, ”Design of a Radiation Tolerant LIDAR Receiver with mm Accuracy in 0.13 μm CMOS”, in proceedings STW PRORISC, The Netherlands, November, 2008.
• M. Van Uffelen, A. Giraud, J. Armani, F. Joffre, W. De Cock, P. Leroux, ”Recent developments in radiation tolerant fibre optics and electronics for nuclear environments”, in proceedings of the INTRA workshop, France, September, 2008.
• P. Leroux, W. De Cock, M. Van Uffelen, M. Steyaert, ”Design and Radiation Assessment of Optoelectronic Transceiver Circuits for ITER”, in proceedings of the Topical Workshop on Electronics for Particle Physics, Greece, September, 2008.
• S. Put, E. Simoen, S. Van Huylenbroeck, C. Claeys, M. Van Uffelen and P. Leroux, ”Effect of the presence of deep trench isolation on the gamma radiation behavior of a 0.13 um SiGe:C NPN HBT technology”, in proceedings of the IEEE European Conference on Radiation and Its Effects on Components and Systems, Finland, September, 2008.
• P. Leroux, W. De Cock, M. Van Uffelen, M. Steyaert, ”Design, Assessment and Modelling of an Integrated 0.4 um SiGe Bipolar VCSEL Driver under Gamma-Radiation”, in proceedings of the IEEE European Conference on Radiation and Its Effects on Components and Systems}, Finland, September, 2008.
• P. Karsmakers P. Leroux, J. De Brabanter, K. Pelckmans, J. Suykens, ”Least Squares Support Vector Machines for Modeling Electronic Devices”, in proceedings of European Conference on the Use of Modern Information and Communication Technologies, Belgium, March, 2008.
• S. Put, M. Qureshi, E. Simoen, S. Van Huylenbroeck, R. Venegas, C. Claeys, M. Van Uffelen, P. Leroux and F. Berghmans, ”Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation”, to be presented at IEEE European Conference on Radiation and Its Effects on Components and Systems, France, September, 2007.
• S. Put, E. Simoen, N. Collaert, C. Claeys, M. Van Uffelen and P. Leroux, ”Geometry and strain dependence of the proton radiation behavior of MuGFET devices”, in Proceedings IEEE Nuclear and Space Radiation Effects Conference, Hawaii, July, 2007.
• S. Put, E. Simoen, E. Augendre, C. Claeys, M. Van Uffelen and P. Leroux, ”Impact of Si channel thickness and buried oxide on proton radiation behavior of 65 nm FD SOI”, in Proceedings IEEE EUROSOI, Belgium, January, 2007.
• M. Van Uffelen, P. Leroux, F. Berghmans, ”Opto-electronics Developments for ITER”, in Proceedings 12th Workshop on Electronics for LHC and Future Experiments, Spain, September, 2006.
• S. Put, E. Simoen, E. Augendre, C. Claeys, M. Van Uffelen and P. Leroux, ”Comparison of the radiation behavior of 65 nm Fully Depleted Silicon-On-Insulator MOSFETs employing different tensile-strain-inducing techniques”, in Proceedings IEEE European Conference on Radiation and Its Effects on Components and Systems, Greece, September, 2006.
• P. Leroux, S. Lens, M. Van Uffelen, W. De Cock, M. Steyaert, F. Berghmans, ”Design and Assessment of a Circuit and Layout Level Radiation Hardened CMOS VCSEL Driver”, in Proceedings IEEE European Conference on Radiation and Its Effects on Components and Systems, Greece, September, 2006.
• P. Leroux, M. Van Uffelen, F. Berghmans, E. Simoen, C. Claeys, ”A Compact, Broad-range, Physical SPICE Model Extension for the g–radiation Induced b-degradation in a Discrete SiGe HBT”, in Proceedings IEEE European Conference on Radiation and Its Effects on Components and Systems, Greece, September, 2006.
• M. Van Uffelen, S. Geboers, P. Leroux, F. Berghmans ”SPICE modelling of a discrete COTS SiGe HBT up to MGy dose levels”, in Proceedings IEEE European Conference on Radiation and Its Effects on Components and Systems, France, September, 2005.
• P. Leroux, M. Van Uffelen, F. Berghmans, A. Giraud, ”Design and Assessment of a High Gamma-Dose Tolerant VCSEL Driver with Discrete SiGe HBT’s”, in Proceedings IEEE European Conference on Radiation and Its Effects on Components and Systems, France, September, 2005.
• M. Van Uffelen, F. Berghmans, S. Geboers, P. Leroux, ”High total dose gamma radiation assessment of commercially available SiGe Heterojunction Bipolar Transistors”, in Proceedings SPIE Photonics for Space Environments, San Diego, USA, August 2005.
• P. Leroux, M. Steyaert, ”RF-ESD Design and Measurement of CMOS LNAs: a Comparison between Diode and Inductive Protection”, in Proceedings IEEE International Conference on Microelectronic Teststructures, Leuven, Belgium, April 2005.
• P. Leroux, C. Hermans, M. Steyaert, ”Design of Integrated CMOS Photodiodes with low-noise Amplifiers”, in IEEE European Solid-State Circuits Conference, tutorial, Leuven, Belgium, September 2004.
• C. Hermans, P. Leroux, M. Steyaert, ”Two High-Speed Optical Front-ends with Integrated Photodiodes in Standard 0.18 μm CMOS”, in Proceedings IEEE European Solid-State Circuits Conference, Leuven, Belgium, September 2004.
• P. Leroux, M. Steyaert, ”A 5 GHz CMOS Low-Noise Amplifier with Inductive ESD Protection Exceeding 3 kV HBM”, in Proceedings IEEE European Solid-State Circuits Conference, Leuven, Belgium, September 2004.
• C. Hermans, P. Leroux, M. Steyaert, ”A High-speed Optical Front-end with Integrated Photodiode in 90nm CMOS”, in Proceedings IEEE International Symposium on Signals, Systems and Electronics, August 2004.
• C. Hermans, P. Leroux, M. Steyaert, ”Gigabit Photodiodes in Standard Digital nanometer CMOS Technologies”, in Proceedings IEEE European Solid-State Device Research Conference, Estoril, Portugal, September 2003.
• V. Vassilev, S. Thijs, P. Lajo Segura, G. Groeseneken, P. Wambacq, P. Leroux, M. Steyaert, M. Natarajan, H Maes, ”Co-Design Methodology to Provide High ESD Protection Levels in the Advanced RF Circuits”, in Proceedings IEEE International Symposium on Electrical OverStress and ElectroStatic Discharge, Las Vegas, US, October 2003.
• P. Leroux, M. Steyaert, ”RF-ESD Co-Design for High Performance CMOS LNAs”, in Proceedings Workshop on Advances in Analogue Circuit Design, Graz, Austria, april 2003.
• W. De Cock, P. Leroux, P. Coppejans, K. Mertens, M. Steyaert, ”Towards full integration of low power CMOS RF-Frontends”, in GIRAFFE workshop at the IEEE International Solid-State Circuits Conference, San Francisco, USA, February 2003.
• P. Vancorenland, Ph. Coppejans, W. De Cock, P. Leroux, M. Steyaert, ”Optimization of a fully integrated Low power CMOS GPS receiver”, in Proceedings IEEE International Conference on Computer Aided Design, pp. 305-308, November 2002.
• P. Leroux, V. Vassilev, M. Steyaert, H. Maes, ”A 6mW, 1.5dB NF CMOS LNA for GPS with 3kV HBM ESD Protection”, in Proceedings IEEE International Symposium on Electrical OverStress and ElectroStatic Discharge, pp. 18-25, October 2002.
• P. Leroux, V. Vassilev, M. Steyaert, G. Groeseneken, ”A 1.3dB NF CMOS LNA for GPS with 3kV HBM ESD-protection”, in Proceedings IEEE European Solid-State Circuits Conference, pp. 335-338, September 2002.
• P. Leroux, M. Steyaert, ”A New ESD Protection Topology for High Frequency CMOS Low Noise Amplifiers”, in Proceedings IEEE International Symposium on Electromagnetic Compatibility, pp. 129-133, September 2002.
• M. Steyaert, Ph. Coppejans, W. De Cock, P. Leroux, P. Vancorenland, "A fully-integrated GPS Receiver front-end with 40 mW power consumption”, in proceedings IEEE International Solid-State Circuits Conference, vol. XLV, pp. 396-397, February 2002.
• M. Steyaert, B. De Muer, J. Janssens, M. Borremans, P. Leroux, ”The Design of CMOS Cellular Transceiver Front-Ends”, in IEEE European Conference on Circuit Theory and Design, August 2001.
• P. Leroux, J. Janssens, M. Steyaert, ”A 0.8dB NF ESD-protected 9mW CMOS LNA”, in Proceedings IEEE International Solid-State Circuits Conference, vol. XLIV, pp. 410-411, February 2001.

Presentations at conferences without proceedings

• P. Leroux, ”Modeling and design of analog integrated circuits for applications under extreme radiation conditions”, presented at SCK-CEN Topical day on radiation effects on instrumentation: from components to systems , Mol, Belgium, June 2010.

• P. Leroux, ”Extreme environment electronics (Micro-)chips for (Mega-)fusion”, presented at IEEE student branch Leuven Microelectronics Symposium, Leuven, Belgium, March 2010.

• Y. Cao, P. Leroux, ”Integration of a radiation tolerant LIDAR receiver with mm accuracy and kHz repetition rate”, presented at SCK-CEN Day of the PhD's, Mol, Belgium, October, 2009.

• P. Leroux, ”Design of radiation tolerant integrated circuits for optical communication”, presented at Chip Design Day IEEE Student Branch Antwerp, Antwerpen, Belgium, May 2009.

• P. Leroux, W. De Cock, M. Van Uffelen, ”Design of radiation tolerant integrated circuits for optical communication”, presented at SCK-CEN Fusion Day workshop,Mol, Belgium, November 2008.
• W. De Cock, H. Versmissen, P. Leroux, M. Van Uffelen, ”Development of radiation-tolerant amplifiers for remote handling equipment sensors”, presented at SCK-CEN Fusion Day workshop, Mol, Belgium, November 2008.
• S. Put, P. Leroux, M. Van Uffelen, C. Claeys, ”Study and design of radiation tolerant electronic semiconductor devices for communication under high radiation levels”, presented at SCK-CEN Day of the PhD's, Mol, Belgium, October, 2008.
• P. Leroux, W. De Cock, M. Van Uffelen, ”The design of radiation tolerant integrated circuits for miniaturized instrumentation in future nuclear reactor environments”, invited presentation at IEEE Topical Day on Radiation Tolerant Instrumentation: from transistor to integrated systems, Belgium, March, 2008.
• D. De Jonghe, P. Leroux, ”Design of a radiation tolerant front-end for a LIDAR receiver with mm accuracy in 0.13 um CMOS", presentation at IEEE RADFAC, Belgium, March, 2008.
• S. Put, P. Leroux, M. Van Uffelen, C. Claeys ”Effect of the presence of a deep trench isolation on the gamma radiation behavior of a 0.13 um SiGe NPN HBT technology”, presentation at IEEE RADFAC, Belgium, March, 2008.